发明名称 METHOD OF INSPECTING DEFECT
摘要 PROBLEM TO BE SOLVED: To provide a method of inspecting a defect capable of easily inspecting a conduction state of a contact hole.SOLUTION: This method of inspecting a defect includes: a coating film formation step of forming, in a first atmospheric pressure state, a plastic film 4 covering one-side openings out of openings with respect to U-shaped tubes 6 of tubular contact holes which are formed on a substrate in manufacturing a semiconductor device, and in each of which the two tubular contact holes are connected to each other on the bottom surface side to form a tubular shape, and both ends of the tubular shape open at the two openings formed on the upper surface of the substrate; an atmospheric pressure change step of deforming the plastic film 4 on the U-shaped tubes 6 with a part of the tubular shape of the U-shaped tube 6 out of the tubular tubes 6 closed by exposing the substrate covered with the plastic film 4 to a second atmospheric pressure state different from the first atmospheric pressure state; and an inspection step of inspecting whether the part of the tubular shape of the U-shaped tube 6 is closed by observing whether the plastic film 4 has been deformed.
申请公布号 JP2011003642(A) 申请公布日期 2011.01.06
申请号 JP20090144189 申请日期 2009.06.17
申请人 TOSHIBA CORP 发明人 NAGASHIMA KUNIHARU
分类号 H01L21/66;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/66
代理机构 代理人
主权项
地址