| 摘要 |
PROBLEM TO BE SOLVED: To restrain a carrier injection amount from an anode p-layer without degrading reverse voltage or introducing a lifetime killer, and to improve the reverse recovery breakdown strength of a semiconductor device without increasing forward voltage.SOLUTION: The semiconductor device includes a surface structure 29 having a first recessed part 27a and first projection-like semiconductor parts 28a repeated at predetermined pitches interposing the first recessed part 27a in an active part 30 for running a main current thereto on one-side principal surface side of an n-type semiconductor substrate 18, wherein: the first recessed part 27a includes a conductor layer 16 embedded through an insulation film 15; the first projection-like semiconductor part 28a includes an n-type carrier injection suppression layer 12 having a lower end surface flush with the first recessed part 27a and a p-type semiconductor layer 11 in contact with the upper surface of the carrier injection suppression layer 12, and further includes a first main electrode 14 coming into ohmic contact with the surface of the surface structure 29. |
