CRYSTALLINE SILICON TYPE SOLAR CELL AND PROCESS FOR MANUFACTURE THEREOF

摘要

Provided is a hetero-junction type of solar cell which works at a high photoelectric conversion efficiency with less warpage of the substrate even with a small thickness of the silicon crystal substrate. The crystalline silicon substrate (1) has a thickness ranging from 50 µm to 200 µm, and has a rough surface structure on at least the principal face on the light incidence side. The surface of the transparent conductive layer (4) on the light incidence side has a rough surface structure. The height differences in the rough surface structure of the transparent conductive layer (4) on the light incidence side are preferably smaller than the height differences in the rough surface structure of the crystalline silicon substrate (1) on the light incidence side. The roughness intervals in the rough surface structure on the surface of the transparent conductive layer (4) on the light incidence side are preferably smaller than the roughness intervals in the rough structure on the surface of the crystalline silicon substrate (1) on the light incidence side. Preferably, the transparent conductive layer (4) on the light incidence side comprises a zinc oxide layer having a thickness ranging from 300 to 2500 nm, and the zinc oxide layer contains hexagonal zinc oxide orienting preferentially in the direction of a (10-10) plane, a (11-20) plane, or a (10-11) plane.