| 摘要 |
<p>PURPOSE: A method for manufacturing a capacitor is provided to minimize the loss of the upper side of a storage node by separating the storage node after a floating pattern functioning as a support is formed. CONSTITUTION: A storage node contact plug(33) is formed on the upper side of a substrate. A plurality of open regions are formed by etching the floating layer, the first separation insulation layer, and the etch stop layer. A second separation insulation layer is formed on the conductive layer to close the open region. A floating pattern(36A) is formed by selectively etching the part of the floating layer. A plurality of storage nodes(38B) are formed by separating the storage node to expose the floating pattern. The first separation insulation layer is removed.</p> |
