发明名称 |
INSPECTION METHOD OF PHOTORESIST PATTERNING |
摘要 |
PROBLEM TO BE SOLVED: To easily perform inspection of photoresist patterning.SOLUTION: A nozzle 16 moves as supplying photoresist liquid 14 from its slit 18. A photoresist layer 20 is formed on a film 10. A resist pattern 32 covering a part of the film 10 is formed by photolithography from the photoresist layer 20. The resist pattern 32 is inspected. The photolithography includes exposure which is performed so that a latent image 24 may be transferred to the photoresist layer 20 and development of the photoresist layer 20 which is performed so that the latent image 24 may be left. The latent image 24 includes a dummy latent image 28 which continuously extends parallel to the length direction of the slit 18. The resist pattern 32 includes a dummy resist 34 which is formed in response to the dummy latent image 28. The inspection of the resist pattern 32 includes inspection of the presence or absence of discontinuity 22 in the length direction of the dummy resist 34. |
申请公布号 |
JP2011003697(A) |
申请公布日期 |
2011.01.06 |
申请号 |
JP20090145073 |
申请日期 |
2009.06.18 |
申请人 |
PANASONIC LIQUID CRYSTAL DISPLAY CO LTD |
发明人 |
OFUJI YOSHIHIRO;WATANABE RYUTA;IMABAYASHI YOSHITAKA |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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