发明名称 INSPECTION METHOD OF PHOTORESIST PATTERNING
摘要 PROBLEM TO BE SOLVED: To easily perform inspection of photoresist patterning.SOLUTION: A nozzle 16 moves as supplying photoresist liquid 14 from its slit 18. A photoresist layer 20 is formed on a film 10. A resist pattern 32 covering a part of the film 10 is formed by photolithography from the photoresist layer 20. The resist pattern 32 is inspected. The photolithography includes exposure which is performed so that a latent image 24 may be transferred to the photoresist layer 20 and development of the photoresist layer 20 which is performed so that the latent image 24 may be left. The latent image 24 includes a dummy latent image 28 which continuously extends parallel to the length direction of the slit 18. The resist pattern 32 includes a dummy resist 34 which is formed in response to the dummy latent image 28. The inspection of the resist pattern 32 includes inspection of the presence or absence of discontinuity 22 in the length direction of the dummy resist 34.
申请公布号 JP2011003697(A) 申请公布日期 2011.01.06
申请号 JP20090145073 申请日期 2009.06.18
申请人 PANASONIC LIQUID CRYSTAL DISPLAY CO LTD 发明人 OFUJI YOSHIHIRO;WATANABE RYUTA;IMABAYASHI YOSHITAKA
分类号 H01L21/027 主分类号 H01L21/027
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