发明名称 |
MEMORY AND WRITE CONTROL METHOD |
摘要 |
PURPOSE: A memory and a write control method thereof are provided to store data in a storage device by supplying a write current using a write voltage consisting of at least two independent two pulse sequences. CONSTITUTION: A memory device(2) is arranged in an array shape. The memory device forms a cell array(5). The memory device is connected onto a bit line-source line extending the cell array in a vertical direction. The gate of a selective MOS transistor(3) is connected to a word line extending the cell array in a horizontal direction. The left end of each word line is connected to a row decoder(6) arranged in the left side of the cell array. The right end of each word line is opened. |
申请公布号 |
KR20100138782(A) |
申请公布日期 |
2010.12.31 |
申请号 |
KR20100058581 |
申请日期 |
2010.06.21 |
申请人 |
SONY CORPORATION |
发明人 |
HIGO YUTAKA;HOSOMI MASANORI;IKARASHI MINORU;KANO HIROSHI;KUSUNOKI SHINICHIRO;OHMORI HIROYUKI;OISHI YUKI;YAMANE KAZUTAKA;YAMAMOTO TETSUYA;BESSHO KAZUHIRO |
分类号 |
G11C11/15;G11C5/14;H01L27/115 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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