发明名称 MEMORY AND WRITE CONTROL METHOD
摘要 PURPOSE: A memory and a write control method thereof are provided to store data in a storage device by supplying a write current using a write voltage consisting of at least two independent two pulse sequences. CONSTITUTION: A memory device(2) is arranged in an array shape. The memory device forms a cell array(5). The memory device is connected onto a bit line-source line extending the cell array in a vertical direction. The gate of a selective MOS transistor(3) is connected to a word line extending the cell array in a horizontal direction. The left end of each word line is connected to a row decoder(6) arranged in the left side of the cell array. The right end of each word line is opened.
申请公布号 KR20100138782(A) 申请公布日期 2010.12.31
申请号 KR20100058581 申请日期 2010.06.21
申请人 SONY CORPORATION 发明人 HIGO YUTAKA;HOSOMI MASANORI;IKARASHI MINORU;KANO HIROSHI;KUSUNOKI SHINICHIRO;OHMORI HIROYUKI;OISHI YUKI;YAMANE KAZUTAKA;YAMAMOTO TETSUYA;BESSHO KAZUHIRO
分类号 G11C11/15;G11C5/14;H01L27/115 主分类号 G11C11/15
代理机构 代理人
主权项
地址