发明名称 NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF
摘要 In a method of operating a nonvolatile memory device, at least one among memory cell blocks of the nonvolatile memory device is designated as a content addressable memory (CAM) block which includes a plurality of CAM cells coupled to respective word lines of the nonvolatile memory device. Chip information for operations of the nonvolatile memory device is stored in the CAM cells which are coupled to a selected word line, whereas the remaining CAM cells of the CAM block are in an erased state.
申请公布号 US2010328979(A1) 申请公布日期 2010.12.30
申请号 US20100826162 申请日期 2010.06.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK JIN SU
分类号 G11C15/00 主分类号 G11C15/00
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