| 摘要 |
Disclosed is a method for treating semiconductor wafer comprising: - providing a stack comprising: - a high-k layer comprising a first oxide material, wherein the first oxide material contains hafnium and/or zirconium, and - a cap-layer comprising a second oxide material, wherein the cap-layer has been deposited on top of the high-k layer, wherein the second oxide material contains lanthanum, a lanthanide and/or aluminium, - conducting a step SA wherein a liquid A is supplied to the surface of the semiconductor wafer, wherein liquid A is an aqueous solution containing an oxidizing agent, - conducting a step SB wherein a liquid B is supplied to the surface of the semiconductor wafer, wherein step SB is carried out after step SA, wherein liquid B is a liquid with a pH-value lower than 6, and - conducting a step SC wherein a liquid C is supplied to the surface of the semiconductor wafer, wherein step SC is carried out after step SB, wherein liquid C is an aqueous acidic solution with a fluorine concentration of at least 10 ppm. |
