发明名称 |
Layered dielectric on silicon carbide semiconductor structures |
摘要 |
<p>A method of producing a silicon carbide insulated gate device that is particularly suited for high power, high field or high temperature operation is disclosed. The method comprises providing a layer of silicon dioxide (12) on a portion of silicon carbide (11) and providing on the layer of silicon dioxide a layer of an insulating material (13), other than silicon dioxide, with a thickness that is greater than the thickness of the silicon dioxide layer and with the insulating material having a dielectric constant higher than the dielectric constant of silicon dioxide. A gate contact (14) is deposited on the layer of the insulating material. A thickness of the silicon dioxide layer represents between 0.5 and 33% of an insulation structure comprising the silicon dioxide layer and the layer of insulating material.</p> |
申请公布号 |
EP2267760(A2) |
申请公布日期 |
2010.12.29 |
申请号 |
EP20100178742 |
申请日期 |
1999.08.27 |
申请人 |
CREE, INC. |
发明人 |
LIPKIN, LORI, A.;PALMOUR, JOHN, WILLIAMS |
分类号 |
H01L21/04;H01L29/749;H01L21/02;H01L21/28;H01L21/314;H01L21/329;H01L21/336;H01L21/338;H01L21/822;H01L27/04;H01L29/06;H01L29/12;H01L29/16;H01L29/161;H01L29/24;H01L29/40;H01L29/51;H01L29/739;H01L29/78;H01L29/812;H01L29/861;H01L29/94 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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