| 摘要 |
<p>The object to provide a highly-integrated SGT-based SRAM is achieved by forming an SRAM using an inverter which comprises a first island-shaped semiconductor layer, a first gate dielectric film in contact with a periphery of the first island-shaped semiconductor layer, a first gate electrode having one surface in contact with the first gate dielectric film, a second gate dielectric film in contact with another surface of the first gate electrode, a first arc-shaped semiconductor layer in contact with the second gate dielectric film, a first first-conductive-type high-concentration semiconductor layer arranged on a top of the first island-shaped semiconductor layer, a second first-conductive-type high-concentration semiconductor layer arranged underneath the first island-shaped semiconductor layer, a first second-conductive-type high-concentration semiconductor layer arranged on a top of the first arc-shaped semiconductor layer, and a second second-conductive-type high-concentration semiconductor layer arranged underneath the first arc-shaped semiconductor layer. Figure 1.</p> |
