发明名称 |
Storage node having a metal-insulator-metal structure, non-volatile memory device including a storage node having a metal-insulator-metal structure and method of operating the same |
摘要 |
A storage node having a metal-insulator-metal structure, a non-volatile memory device including a storage node having a metal-insulator-metal (MIM) structure and a method of operating the same are provided. The memory device may include a switching element and a storage node connected to the switching element. The storage node may include a first metal layer, a first insulating layer and a second metal layer, sequentially stacked, and a nano-structure layer. The storage node may further include a second insulating layer and a third metal layer. The nano-structure layer, which is used as a carbon nano-structure layer, may include at least one fullerene layer.
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申请公布号 |
US7859035(B2) |
申请公布日期 |
2010.12.28 |
申请号 |
US20060606889 |
申请日期 |
2006.12.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
MOON CHANG-WOOK;LEE SANG-MOCK;YOO IN-KYEONG;LEE SEUNG-WOON;BOURIM EL MOSTAFA;LEE EUN-HONG;CHO CHOONG-RAE |
分类号 |
H01L27/108;H01L29/94 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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