<p>PURPOSE: The nano wire memory controls the several energy states by using the gate. The current level of multi-level is constituted. CONSTITUTION: The source(630) and drain(620) are formed on the substrate(610). The nanochannel(690) is formed between source and drain. Nanochannel comprises nano dots(670, 680) and the nano wire having a plurality of potentials collecting the electric charge. According to the nano wire is the voltage of source and drain, source and drain interval are interlinked electrically.</p>
申请公布号
KR20100134996(A)
申请公布日期
2010.12.24
申请号
KR20090053397
申请日期
2009.06.16
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人
YU, HAN YOUNG;KIM, BYUNG HOON;OH, SOON YOUNG;YUN, YONG JU;KIM, YARK YEON;HONG, WON GI