| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a solid-state memory in which the variation of resistance values can be prevented. <P>SOLUTION: The solid-state memory includes a superlattice laminate SL formed by laminating a plurality of crystal layers including crystal layers 1, 2 differing in composition, a lower electrode 3 provided on one surface SLa of the superlattice laminate SL in a laminating direction, and an upper electrode 4 provided on the other surface SLb of the superlattice laminate in the laminating direction. The crystal layer 1 included in the superlattice laminate SL is made of a phase change compound. Between the electrodes 3, 4, the superlattic laminate SL which is laminated in an opposite direction thereof is sandwiched, so when electric energy is applied to the superlattice laminate SL through the electrodes 3, 4, uniform electric energy is applied to the laminate surface of the superlattice laminate SL. Consequently, variance in resistance value is small even when information is repeatedly rewritten, so that data can be stably read out. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
