| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing process and a structure that can reduce an area of a storage element by shortening a distance between TMR films as adjacent storage elements when manufacturing a storage element array comprising spin injection type magnetic storage elements. SOLUTION: Respective dimensions are designed so as to satisfy L1>TSW×2 and L1-2×TSW<1F where L1 is a distance between polycrystalline silicon films PS1, PS2 for a processing mask, TSW is the film thickness of each of silicon oxide films serving as sidewall spacers SWL, SWR, and 1F is a minimum processing size of a manufacturing process. Under the conditions, a TMR film is anisotropically dry-etched using the polycrystalline silicon films PS1, PS2 for the processing mask and the sidewall spacers SWL, SWR as the mask to part the TMR film, thereby forming a gap SPC smaller than the size 1F in the TMR film. COPYRIGHT: (C)2011,JPO&INPIT |
