| 摘要 |
<p>Disclosed is a film deposition method for depositing a film on an object to be treated which has, formed on a surface thereof, an insulating layer (1) constituted of a low-k film and having a recess (2) in which a metallic layer (3) is exposed at the bottom. The method comprises a first-metal-containing-film formation step in which a film containing a first metal, e.g., ruthenium (Ru), is formed and a second-metal-containing-film formation step which is implemented after the first-metal-containing-film formation step and in which a film containing a second metal, e.g., manganese (Mn), which serves as a barrier to a filling metal with which the recess will be filled, is formed.</p> |
