REDUCED PROCESS SENSITIVITY OF ELECTRODE-SEMICONDUCTOR RECTIFIERS

摘要

PURPOSE: An electrode-semiconductor rectifier is provided to improve the electric field properties of a semiconductor element by non-uniformly forming the dopant concentration of a mesa region of the semiconductor element. CONSTITUTION: An n-type semiconductor layer(110) is formed on a substrate(105). A trench electrode(130) forms from the upper side of the n-type semiconductor layer and into the n-type semiconductor layer. The trench electrode includes a conductive electrode(132) and an oxide layer(134). A plurality of mesa regions(120) is formed between trench electrodes. A region(150) with an n-type dopant concentration is formed on the upper side of the mesa regions.