发明名称 |
Semiconductor memory devices having a floating gate with a projecting portion and methods of forming semiconductor memory devices having a floating gate with a projecting portion |
摘要 |
According to one embodiment, a semiconductor memory device can be generally characterized as including a gate insulating layer on a semiconductor substrate, a floating gate on the gate insulating layer and a word line disposed on one side of the floating gate. A first side of the floating gate facing the word line may include a projecting portion projecting toward the word line. A tip of the projecting portion may include a corner that extends substantially perpendicularly with respect to a top surface of the semiconductor substrate.
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申请公布号 |
US7855410(B2) |
申请公布日期 |
2010.12.21 |
申请号 |
US20080168799 |
申请日期 |
2008.07.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YANG SEUNG-JIN;HAN JEONG-UK;CHOI YONG-SUK;KWON HYOK-KI;KWON BAE-SEONG |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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