| 摘要 |
PROBLEM TO BE SOLVED: To prevent contamination of a silicon wafer due to heavy metal in a device post-step. SOLUTION: This manufacturing method includes: a rear surface grinding step S31 for grinding a rear surface of a silicon substrate to make thickness to≤100μm; a rear surface polishing step S32 for polishing the ground rear surface of the silicon substrate; an aggregation step S33 for aggregating heavy metal in the silicon substrate to the rear surface by heating the silicon substrate; and a removing step S34 for removing the heavy metal aggregated on the rear surface of the silicon substrate. According to this method, the heavy metal introduced in the rear surface grinding step or the like is aggregated and then removed. Thus, the contamination of the silicon wafer due to the heavy metal in the device post-step is prevented. COPYRIGHT: (C)2011,JPO&INPIT
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