| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor substrate dedicated to a semiconductor device, for easily forming a gettering site in short time and having less possibility that transition defect occurs due to internal stress caused by formation of the gettering site. SOLUTION: A stage heater 48 heats a single crystal wafer 2 at a predetermined temperature range, e.g. 400-1,000°C in advance. Thus, a difference between a maximally achieving temperature near a condensing point in incidence of a laser beam Q2 and the temperature of the entire single crystal wafer 2 is maintained small. COPYRIGHT: (C)2011,JPO&INPIT |
