| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor substrate dedicated to a semiconductor device, for easily forming a gettering site for capturing heavy metal in a short time. SOLUTION: A gettering sink is to be formed in an optional three-dimensional shape broadening in parallel with one surface of a single crystal wafer 2 and extending in a thickness direction of the single crystal wafer as a forming shape. Specifically, the gettering sink may be formed, for example, in a cubic shape, a rectangular parallelepiped shape, or a columnar shape. COPYRIGHT: (C)2011,JPO&INPIT |
