| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a magnetic memory device optimizing write conditions and determining quality precisely. <P>SOLUTION: The magnetic memory device comprises a memory sub-array 1020 having a plurality of magnetic memory cells, a constant current source 1030, a row direction driver 1050 and a column direction driver 1040 connected to the memory sub-array 1020, an address register 1065 connected to the memory sub-array 1020, a data register 1055, an address multiplexer 1090, a sense amplifier 1085, an input/out buffer 1095, and an address buffer 1080 connected to the address multiplexer 1090. The optimal write currents are easily set so as not to adversely affect the magnetization state of other magnetic memory cells. <P>COPYRIGHT: (C)2011,JPO&INPIT |
