| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and a NAND type flash memory which can securely insulate elements. SOLUTION: A groove 6 for an STI with a high aspect ratio is filled with a coating material 8, implanted with oxygen ions or the like, and then oxidized. Therefore, an SiO2 film 16 is formed at a bottom of the groove 6. On the other hand, as for a groove 6 with a small aspect ratio, a high-density plasma CVD method and a TEOS/O3 method are used. Thus, an SiO2 film 15 with a higher insulation property than the SiO2 film 16 is formed. Wherein, the insulation film is formed by an optimum method depending on the aspect ratio of the groove 6, and sure insulation between the elements of the semiconductor device is thus achieved irrespective of the aspect ratio of an element isolation region. COPYRIGHT: (C)2011,JPO&INPIT
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