PURPOSE: The buffer circuit of a semiconductor memory device is provided to suppress the generation of errors in a writing signal by adding a latch to the outputting terminal of a DQS buffer. CONSTITUTION: A DQ signal is inputted through a DQ pad(30). A DIN buffer(20) receives and buffers the DQ signal. A DQS signal is inputted through a DQS pad(35). A DQS buffer(25) receives and buffers the DQS signal. The buffered DQS signal is supplied to an align latch(10) as the controlling signal for the DQ signal. The DQ signal is synchronized with the DQS signal and aligned in the align latch.
申请公布号
KR20100131140(A)
申请公布日期
2010.12.15
申请号
KR20090049881
申请日期
2009.06.05
申请人
HYNIX SEMICONDUCTOR INC.
发明人
HWANG, TAE JIN;KIM, YONG JU;HAN, SUNG WOO;SONG, HEE WOONG;OH, IC SU;KIM, HYUNG SOO;CHOI, HAE RANG;LEE, JI WANG;JANG, JAE MIN;PARK, CHANG KUN