| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for evaluation of active carrier concentration, capable of highly precisely and easily evaluating an active carrier concentration in a light-emitting element, to provide a light-emitting element for reducing active carrier concentration, and to provide a method of manufacturing the light-emitting element. <P>SOLUTION: The method for evaluation of the active carrier concentration is characterized in that the cross-section of at least a compound semiconductor substrate or a light-emitting chip formed by epitaxial growth is exposed along the epitaxial growing direction, and a probe is brought into contact with the surface of the exposed cross-section, and a dc/dv signal is measured by a SCM(Scanning Capacitance Microscope) at least from a p-type cladding layer to an active layer and an n-type cladding layer, or at least from an n-type cladding layer to the active layer and a p-type cladding layer on the surface of the cross section of the compound semiconductor substrate or the light-emitting chip, and to evaluate at least the active carrier concentration in the active layer based on the measurement value. <P>COPYRIGHT: (C)2011,JPO&INPIT |
