| 摘要 |
A semiconductor laser device has structure including: a semiconductor laser chip having an emission surface and a reflection surface which are opposing end surfaces of a resonator; and a photodiode for detecting light that exits from the reflection surface side, the photodiode being used in a wavelength band where a sensitivity of the photodiode rises as a wavelength lengthens, in which the emission surface has a first dielectric multilayer film formed thereon and the reflection surface has a second dielectric multilayer film formed thereon, and in which, when a wavelength at which a reflectance of the first dielectric multilayer film peaks is given asλf and a wavelength at which a reflectance of the second dielectric multilayer film peaks is given asλr, a relationλf<λr is satisfied.
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