发明名称 |
TANTALUM SILICON OXYNITRIDE HIGH-K DIELECTRICS AND METAL GATES |
摘要 |
Electronic apparatus and methods of forming the electronic apparatus include a tantalum silicon oxynitride film on a substrate for use in a variety of electronic systems. The tantalum silicon oxynitride film may be structured as one or more monolayers. The tantalum silicon oxynitride film may be formed using a monolayer or partial monolayer sequencing process. Metal electrodes may be disposed on a dielectric containing a tantalum silicon oxynitride film.
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申请公布号 |
US2010301428(A1) |
申请公布日期 |
2010.12.02 |
申请号 |
US20100855556 |
申请日期 |
2010.08.12 |
申请人 |
FORBES LEONARD;AHN KIE Y;BHATTACHARYYA ARUP |
发明人 |
FORBES LEONARD;AHN KIE Y.;BHATTACHARYYA ARUP |
分类号 |
H01L29/51;H01L21/28 |
主分类号 |
H01L29/51 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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