| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a semiconductor device of high reliability by a method, wherein TFTs of a proper structure are arranged corresponding to the function of a circuit. SOLUTION: A semiconductor device is equipped with a drive circuit section and a pixel section on the same insulator, where gate insulating films 115 and 116 of drive TFTs are set thinner than the gate insulating film 117 of the pixel TFT. In the pixel TFT, channel-forming regions 112a and 112b are formed below a gate electrode 121, and an isolating region 113 is formed between the channel-forming regions 112a and 112b. At this point, the gate electrode 121 partially superposes LDD regions 111a and 111b, and regions which it does not superpose on these regions.</p> |
