| 摘要 |
PURPOSE: A semiconductor device is provided to prevent the generation of a thyristor operation due to a PNPN junction by separately forming transistors with an identical channel in a separated wells. CONSTITUTION: P-wells(305-1, 305-2) are formed on the surface of substrate(300). The P-wells are spaced apart from each other. N-wells(303-2, 303-3, 303-4) are formed to separate the P-wells. The N-wells are adjacently placed to both lateral sides of the P-wells. N+ junction regions(309-6, 309-7) are formed in the N-wells. The N+ junction regions are in connection with power voltage terminals(VDD) through a first voltage line.
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