发明名称 Active resonant circuit with resonant-frequency tunability
摘要 The present invention is directed to provide a low-power-consumption wide-range RF signal processing unit having a small chip occupation area. A semiconductor integrated circuit has, on a semiconductor chip, a resonant circuit including a first capacitor having a capacitance which can be controlled by a first control signal of a first control terminal, and a gyrator for equivalently emulating an inductor by including a second capacitor having a capacitance which can be controlled by a second control signal of a second control terminal. The capacitance and the inductor form a parallel resonant circuit. At the time of changing parallel resonant frequency, the capacitances of the first and second capacitors are coordinately changed. The parallel resonant circuit is suitable for an active load which is connected to an output node of an amplifier.
申请公布号 US7843287(B2) 申请公布日期 2010.11.30
申请号 US20080127782 申请日期 2008.05.27
申请人 RENESAS ELECTRONICS CORPORATION 发明人 MASUDA TORU;MORI HIROSHI
分类号 H03H11/08;H03H11/00 主分类号 H03H11/08
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