发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 When bit lines or sense amplifiers are checked whether they are defective during a test performed to check whether the bit lines are defectively open, an electrical current supplied from one sense amplifier is detected by another sense amplifier. Thus, if plural bit lines are defectively open, they can be detected simultaneously. Consequently, the test time can be shortened greatly.
申请公布号 US2010296342(A1) 申请公布日期 2010.11.25
申请号 US20100782159 申请日期 2010.05.18
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TAKIZAWA MAKOTO;OZAKI SHOICHI;ABE KATSUMI
分类号 G11C16/04 主分类号 G11C16/04
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