发明名称 |
BROADBAND MICROWAVE AMPLIFIER |
摘要 |
A Class-E load circuit topology suitable for switching mode Power Amplifiers (PAs). The inventive load includes a shunt inductive element coupled to an output of said amplifier; a series inductive element coupled to said output of said amplifier; and a series capacitive element coupled to said series inductive element. In the illustrative embodiment, the inventive load is operable at frequencies in the range of 8 - 10 GHz and the shunt inductive element is an inductive bias line for said amplifier. The invention enables an advantageous Class-E amplifier design comprising an input matching network; an active device coupled to the input matching network and a load coupled to the active device and implemented in accordance with the present teachings. Also disclosed is a method for designing a load for use with a Class-E amplifier including the steps of: providing a lumped equivalent circuit representation of the load; optimizing the lumped equivalent circuit representation of the load to achieve near ideal current and voltage operational characteristics over a predetermined frequency range using a time domain simulation; transforming the optimized lumped equivalent circuit representation of the load to a distributed circuit representation; and optimizing the distributed circuit representation of the load to achieve near ideal current and voltage operational characteristics over a predetermined frequency range using a time domain simulation.
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申请公布号 |
CA2577791(C) |
申请公布日期 |
2010.11.23 |
申请号 |
CA20062577791 |
申请日期 |
2006.02.09 |
申请人 |
RAYTHEON COMPANY |
发明人 |
TAYRANI, REZA;GORDON, JONATHAN D. |
分类号 |
H03F3/217 |
主分类号 |
H03F3/217 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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