发明名称 PHASE CHANGE MEMORY DEVICE
摘要 PURPOSE: The phase change memory device uses a plurality of sense amplification enable signals, it divides into the fixed single step and the operation of the amplifier circuit operates. CONSTITUTION: The signal generator(100) is created the first and the second sense amplification enable signal having the respective set activation range length. It supplies the fixed operating current to the phase transformation memory cell corresponding to the word line selection signal and the selection cell resistance sensor(120) senses the resistance value.
申请公布号 KR20100122368(A) 申请公布日期 2010.11.22
申请号 KR20090041370 申请日期 2009.05.12
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YOON, HYUCK SOO
分类号 G11C13/02;G11C5/14;G11C7/06 主分类号 G11C13/02
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