| 发明名称 |
SOLUTION BASED ZIRCONIUM PRECURSORS FOR ATOMIC LAYER DEPOSITION |
| 摘要 |
Oxygen free, solution based zirconium precursors for use in ALD processes are disclosed for growing ZrO2 or other Zr compound films in a self-limiting and conformal manner. An oxygen free, solution based ALD precursor of (t-BuCp)2ZrMC2 is particular useful for depositing ZrO2 or other Zr compound films.
|
| 申请公布号 |
US2010290945(A1) |
申请公布日期 |
2010.11.18 |
| 申请号 |
US20090465085 |
申请日期 |
2009.05.13 |
| 申请人 |
MA CE;KIM KEE-CHAN;MCFARLANE GRAHAM ANTHONY |
发明人 |
MA CE;KIM KEE-CHAN;MCFARLANE GRAHAM ANTHONY |
| 分类号 |
C23C16/06;C01B21/076;C01G25/02;C07F7/00;C22C16/00 |
主分类号 |
C23C16/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
