发明名称 LIGHT EMITTING AND LASING TRANSISTOR DEVICES AND METHODS
摘要 A method for producing light emission from a semiconductor device includes the following steps: providing a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region that forms a tunnel junction adjacent the base region; providing, in the base region, a region exhibiting quantum size effects; providing an emitter terminal, a base terminal, and a collector terminal respectively coupled with the emitter region, the base region, and the collector region; and applying electrical signals with respect to the emitter terminal, the base terminal and the collector terminal to produce light emission from the base region.
申请公布号 WO2010087948(A3) 申请公布日期 2010.11.18
申请号 WO2010US00161 申请日期 2010.01.22
申请人 THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS;FENG, MILTON;HOLONYAK, NICK, JR.;WALTER, GABRIEL;THEN, HAN, WUI 发明人 FENG, MILTON;HOLONYAK, NICK, JR.;WALTER, GABRIEL;THEN, HAN, WUI
分类号 H01S5/00;H01S5/20 主分类号 H01S5/00
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