发明名称 |
MANUFACTURING METHOD OF SOI SUBSTRATE |
摘要 |
An SOI substrate is manufactured by a method in which a first insulating film is formed over a first substrate over which a plurality of first single crystal semiconductor films is formed; the first insulating film is planarized; heat treatment is performed on a single crystal semiconductor substrate attached to the first insulating film; a second single crystal semiconductor film is formed; a third single crystal semiconductor film is formed using the first single crystal semiconductor films and the second single crystal semiconductor films as seed layers; a fragile layer is formed by introducing ions into the third single crystal semiconductor film; a second insulating film is formed over the third single crystal semiconductor film; heat treatment is performed on a second substrate superposed on the second insulating film; and a part of the third single crystal semiconductor film is fixed to the second substrate.
|
申请公布号 |
US2010291755(A1) |
申请公布日期 |
2010.11.18 |
申请号 |
US20100844856 |
申请日期 |
2010.07.28 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ISAKA FUMITO;KATO SHO;NEI KOSEI;KOMATSU RYU;MIZOI TATSUYA;SHIMOMURA AKIHISA |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|