SEMICONDUCTOR ELEMENT FORMED IN A CRYSTALLINE SUBSTRATE MATERIAL AND COMPRISING AN EMBEDDED IN SITU DOPED SEMICONDUCTOR MATERIAL

摘要

The PN junction of a substrate diode in a sophisticated SOI device may be formed on the basis of an embedded in situ doped semiconductor material, thereby providing superior diode characteristics. For example, a silicon/germanium semiconductor material may be formed in a cavity in the substrate material, wherein the size and shape of the cavity may be selected so as to avoid undue interaction with metal silicide material.