发明名称 |
Halbleitervorrichtung |
摘要 |
<p>A semiconductor device includes a semiconductor substrate having a first surface and a second surface. A main region and a sensing region are formed on the first surface side of the semiconductor substrate. A RC-IGBT is formed in the main region and a sensing element for passing electric currents proportional to electric currents flowing through the RC-IGBT is formed in the sensing region. A collector region and a cathode region of the sensing element are formed on the second surface side of the semiconductor substrate. The collector region is located directly below the sensing region in a thickness direction of the semiconductor substrate. The cathode region is not located directly below the sensing region in the thickness direction.</p> |
申请公布号 |
DE102010001215(A1) |
申请公布日期 |
2010.11.18 |
申请号 |
DE20101001215 |
申请日期 |
2010.01.26 |
申请人 |
DENSO CORPORATION |
发明人 |
TANABE, HIROMITSU;KOUNO, KENJI;TSUZUKI, YUKIO;AMANO, SHINJI |
分类号 |
H01L23/62;H01L29/739;H01L29/861 |
主分类号 |
H01L23/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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