| 摘要 |
<p>The present invention provides a new technique, in which direct drawing of ink jet is used and a gap between a source electrode and a drain electrode is narrowed down to 4 µm or less without increasing the number of processes. According to this technique, a conductive layer SD1A and a conductive layer SD2A arranged at opposed positions with a first gap are prepared by direct drawing of ink jet on the upper layer of a silicon semiconductor layer SI by forming a source electrode SD1 and a drain electrode SD2 on a thin-film transistor, and by laminating a layer of the transparent conductive films SD1 and SD2 with a second gap, which is narrower than the first gap between the opposed ends of the conductive layers, to cover the upper layer of said first layer and the opposed ends of the conductive layers arranged at opposed positions.</p> |
