发明名称 |
CMP methods avoiding edge erosion and related wafer |
摘要 |
Methods of avoiding chemical mechanical polish (CMP) edge erosion and a related wafer are disclosed. In one embodiment, the method includes providing a wafer; forming a first material across the wafer; forming a second material at an outer edge region of the wafer, leaving a central region of the wafer devoid of the second material; and performing chemical mechanical polishing (CMP) on the wafer. The second material diminishes CMP edge erosion.
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申请公布号 |
US7833907(B2) |
申请公布日期 |
2010.11.16 |
申请号 |
US20080107980 |
申请日期 |
2008.04.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ANDERSON FELIX P.;STAMPER ANTHONY K. |
分类号 |
H01L21/461 |
主分类号 |
H01L21/461 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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