PURPOSE: A laminated memory device is provided to reduce the length of a connection line between an X decoder or Y decoder and a memory layer by arranging an X decoder array and a Y decoder array with a lattice shape in the same level of a plurality of memory blocks. CONSTITUTION: A plurality of memory layers(120) are formed on a substrate(110). A plurality of Y decoder layers(141,142,143) are interposed between a plurality of first basic laminate structures(10). An X decoder layer(131) electrically transmits and receives a signal to and from the memory layers of memory groups. First and second front connection lines are arranged on the front of the X decoder layer and the memory layers. First and second rear connection lines are arranged on the rear of the memory layers and the X decoder layer.
申请公布号
KR20100120080(A)
申请公布日期
2010.11.12
申请号
KR20100004481
申请日期
2010.01.18
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, HO JUNG;KANG, SANG BEOM;PARK, CHUL WOO;AHN, SEUNG EON;CHOI, HYUN HO