发明名称 CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To provide a chemically amplified photoresist composition or the like from which a pattern having an excellent shape, line edge roughness, and a focus margin can be formed. <P>SOLUTION: The chemically amplified photoresist composition contains an acid generator and a resin, wherein the resin contains a structural unit (b1-3) derived from a monomer that produces a carboxyl group and a hydroxyl group by an action of an acid, without lactone ring. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010256876(A) 申请公布日期 2010.11.11
申请号 JP20100069668 申请日期 2010.03.25
申请人 SUMITOMO CHEMICAL CO LTD 发明人 ICHIKAWA KOJI;SUGIHARA MASAKO;FURUYAMA FUMIO
分类号 G03F7/039;C07C69/013;C07C69/54;C08F220/28;G03F7/004;H01L21/027 主分类号 G03F7/039
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