| 摘要 |
PROBLEM TO BE SOLVED: To increase a dielectric strength voltage BV<SB>DS</SB>between a source and a drain of an LDMOSFET (Lateral Double Diffused Metal Oxide Semiconductor Field-Effect Transistor) by increasing the film thickness of a SOI (Silicon On Insulator) layer. SOLUTION: By forming a P+B embedded layer 13 in an N-type SOI layer 3 between a P-type body layer 4 and a BOX layer 2 directly under the P-type body layer 4, a depletion layer which has not spread up to the BOX layer 2 under the absence of the P+B embedded layer 13 to induce dielectric breakdown and is extended from the P-type body layer 4 to the N-type SOI layer 3 can be extended up to the vicinity of the BOX layer 2, by which the depletion layer extended from the P-type body layer 4 can be integrated with the depletion layer extended from the BOX layer 2 to the N-type SOI layer 3 and hence the depletion layer can be spread within the entire N-type SOI layer 3 toward an N+ type drain layer 8. COPYRIGHT: (C)2011,JPO&INPIT |
