| 摘要 |
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a plurality of compound semiconductor layers including a first conductive semiconductor layer (110), an active layer (120) and a second conductive semiconductor layer (130); an electrode layer (150) on the plurality of compound semiconductor layers; and a channel layer (140) including protrusions (145) and formed along a peripheral portion of an upper surface of the plurality of compound semiconductor layers. |
