| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition method, a film deposition system, and a method for manufacturing a semiconductor device, sharply improving poor ignition when discharge is continuously performed. SOLUTION: A first electrode 14 is brought into contact with a predetermined position of a cathode 12 to detect whether or not the discharge is generated between the cathode 12 and an anode 13. According to the detection result, a second electrode 15 is brought into contact with a position different from the predetermined position, the discharge is generated to generate plasma, and a conductive material contained in the plasma is deposited at an upper part of a substrate 51. An ignition probability of the electrodes in film deposition is sharply raised, and thus, production efficiency and production yield of the semiconductor device are improved. COPYRIGHT: (C)2011,JPO&INPIT
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