PROCESS AND APPARATUS FOR PRODUCING CRYSTALLINE FILM

摘要

Efficient formation of even and fine crystals during crystallization of an amorphous film is made possible. Continuous wave laser light (1a) having a visible-region wavelength of 510-540 nm is irradiated upon an amorphous film (amorphous silicon film (6a)) overlying a substrate (6), and the amorphous film is thereby heated to a temperature not exceeding the melting point, thereby crystallizing the amorphous film. The continuous wave laser light desirably has a power density of 55-290 kW/cm2 and a minor-axis width of 100 µm or shorter. It is also desirable that the continuous wave laser light should be relatively scanned at a scanning rate of 50-1,000 mm/sec. A finely crystalline film having reduced unevenness of crystal grain diameter can be efficiently produced from an amorphous film without damaging the substrate.