| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor optical element that reduces parasitic capacitance and suppresses deterioration in high-temperature characteristics. SOLUTION: The semiconductor optical element 1 includes a first semiconductor layer 3 of a first conductivity-type, an active layer 5 formed on the first semiconductor layer 3, a second conductivity-type semiconductor region 19 including a first semiconductor portion 19a provided on the active layer 5 and a second semiconductor portion 19b having side faces 25a and 25b, a resin body 9a provided on the side face 25a and first semiconductor portion 19a, an electrode 11 provided on the resin body 9a and an upper surface of the second conductor portion 19b and electrically connected to the second semiconductor portion 19b, and a first metal layer 13 provided on the side face 25b and connected to the electrode 11. COPYRIGHT: (C)2011,JPO&INPIT
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