| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for processing a substrate, by which a mask for etching that uses plasma processing can be formed at low cost, and to provide a method for producing a semiconductor chip. <P>SOLUTION: When a mask, which is used for plasma dicing wherein a semiconductor wafer 1 is divided into separate semiconductor chips 1e by etching that uses plasma processing, is formed, a liquid repellent pattern composed of a liquid repellent film 3 is formed by applying a liquid repellent liquid to regions of a back surface 1b, the regions being the subject of the etching. After that, firstly a low-viscosity resin 4a, and then a high-viscosity resin 4b are supplied to the back surface 1b that has been provided with the liquid repellent pattern, thereby forming a resin film 4, which has a larger film thickness than the liquid repellent film 3, in the regions where the liquid repellent film 3 is not present. Then, the resin film 4 is cured, thereby forming a mask 4* that covers regions other than the regions to be removed by etching. Consequently, a mask for etching can be formed at low cost without using a high-cost method such as a photolithography method. <P>COPYRIGHT: (C)2011,JPO&INPIT |
