| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a larger area to take out light without including an n-type Si substrate and a buffer layer, concerning a GaN-base LED to be formed by using a GaN-LED on Si substrate. <P>SOLUTION: The method for fabricating a light emitting diode (LED) is provided, including: a first process for forming, on an n-type Si substrate 10, an epitaxial growth layer 40 and a p-side electrode 26; a second process for joining a supporting substrate 30 to the p-side electrode; a third process for removing, by etching, the n-type Si substrate and the buffer layer 40-1; and a fourth process for forming an n-side electrode 42 in a region other than the region where output light is taken-out in the surface 16a on the side where the light emitting region of an n-type GaN layer 16 is formed. <P>COPYRIGHT: (C)2011,JPO&INPIT |
