发明名称 MAGNETRON SPUTTERING APPARATUS FOR THICK LAYER
摘要 PURPOSE: A magnetron sputtering apparatus for thick layer deposition is provided to simultaneously perform deposition on multiple substrates by facilitating cooling after long-time sputtering. CONSTITUTION: A magnetron sputtering apparatus for thick layer deposition comprises a sputtering chamber(200), first deposition sources(211-1~211-11), second deposition sources(213-1~213-11), plate fixing units(215), and a reciprocating unit(217). The first deposition sources are provided with DC power and create DC plasma for sputtering and deposition. The second deposition sources are installed in the sputtering chamber, alternately with the first deposition sources, and provided with DC pulse or AV power to create DC pulse or AC plasma for sputtering and deposition. Substrates(10) on which deposition is implemented are fixed to the substrate fixing units. The reciprocating unit reciprocates the substrate fixing units so that the substrates face the first and second deposition sources alternately.
申请公布号 KR20100117236(A) 申请公布日期 2010.11.03
申请号 KR20090035878 申请日期 2009.04.24
申请人 KI-XIMAX. CO., LTD. 发明人 KIM, KAB SEOG;KIM, YONG MO
分类号 C23C14/56;C23C14/34 主分类号 C23C14/56
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