发明名称 |
Method for filling a contact hole and integrated circuit arrangement with contact hole |
摘要 |
A method in which a base layer is deposited in a contact hole region under a protective gas, where base layer contains a nitride as main constituent. After the deposition of the base layer, a covering layer is deposited under gaseous nitrogen. An adhesion promoting layer results which is simple to produce and has good electrical properties.
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申请公布号 |
US7825510(B2) |
申请公布日期 |
2010.11.02 |
申请号 |
US20080032267 |
申请日期 |
2008.02.15 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
FOERSTER JUERGEN;PRUEGL KLEMENS;SCHUDERER BERTHOLD |
分类号 |
H01L23/34;H01L21/28;H01L21/285;H01L21/768 |
主分类号 |
H01L23/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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